BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
7. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
100 nA
10 A
Unit
ICBO
collector-base cut-off VCB = 25 V; IE = 0 A
-
-
-
-
current
VCB = 25 V; IE = 0 A;
Tj = 150 C
IEBO
hFE
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
-
100 nA
DC current gain
VCE = 10 V
IC = 5 mA
50
-
DC current gain
VCE = 1 V
[1]
[1]
[1]
IC = 500 mA
85
60
40
-
-
-
375
IC = 1 A
-
-
IC = 2 A
DC current gain
hFE selection -16
hFE selection -25
VCE = 1 V
[1]
[1]
[1]
[1]
[1]
[1]
IC = 500 mA
100
160
-
-
-
-
250
375
IC = 500 mA
VCEsat
collector-emitter
saturation voltage
IC = 1 A; IB = 100 mA
IC = 2 A; IB = 200 mA
VCE = 10 V; IC = 5 mA
VCE = 1 V; IC = 1 A
0.5
0.6
0.7
1
V
V
VBE
base-emitter voltage
-
-
-
-
V
-
V
Cc
fT
collector capacitance VCB = 10 V; IE = ie = 0 A;
28
-
pF
f = 1 MHz
transition frequency
VCE = 5 V; IC = 50 mA;
40
140
-
MHz
f = 100 MHz
[1] Pulse test: tp 300 s; = 0.02.
BCP69_BC869_BC69PA
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
13 of 24
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