BCP53; BCX53; BC53PA
NXP Semiconductors
80 V, 1 A PNP medium power transistors
006aac688
006aaa230
300
−1.6
I
(mA) = −45 −40.5 −36
B
I
C
h
(A)
FE
−31.5
−27
−22.5
(1)
−1.2
200
−18
−13.5
(2)
−0.8
−0.4
0
−9
100
−4.5
(3)
0
–10
–4
–3
–2
–1
–10
–10
–10
–1
–10
0
−0.4
−0.8
−1.2
−1.6
−2.0
(V)
I
(A)
V
C
CE
VCE = 2 V
amb = 100 C
Tamb = 25 C
(1)
T
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 15. DC current gain as a function of collector
current; typical values
Fig 16. Collector current as a function of
collector-emitter voltage; typical values
006aac689
006aac690
–1.2
–10
V
CEsat
(V)
V
(V)
BE
(1)
–0.8
–1
(2)
(1)
(2)
(3)
–1
–0.4
–10
–10
(3)
–2
0.0
–10
–1
2
3
4
–1
2
3
4
–1
–10
–10
–10
–10
(mA)
–10
–1
–10
–10
–10
–10
I (mA)
C
I
C
VCE = 2 V
IC/IB = 10
(1) Tamb = 100 C
(2) amb = 25 C
(3) Tamb = 55 C
(1) Tamb = 55 C
(2)
Tamb = 25 C
T
(3) Tamb = 100 C
Fig 17. Base-emitter voltage as a function of collector
current; typical values
Fig 18. Collector-emitter saturation voltage as a
function of collector current; typical values
BCP53_BCX53_BC53PA
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 9 — 19 October 2011
13 of 22
NXP [ NXP ]
