BCP53; BCX53; BC53PA
NXP Semiconductors
80 V, 1 A PNP medium power transistors
006aac687
3
10
Z
th(j-a)
(K/W)
2
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
10
0.1
0.05
0.02
1
0.01
0
–1
10
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
7. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter Conditions
collector-base cut-off VCB = 30 V; IE = 0 A
Min
Typ
Max
100 nA
10 A
Unit
ICBO
-
-
-
-
current
VCB = 30 V; IE = 0 A;
Tj = 150 C
IEBO
hFE
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
100 nA
DC current gain
VCE = 2 V
IC = 5 mA
63
63
40
-
-
-
-
IC = 150 mA
IC = 500 mA
VCE = 2 V
250
-
[1]
DC current gain
hFE selection -10
hFE selection -16
IC = 150 mA
IC = 150 mA
63
100
-
-
-
-
160
250
[1]
[1]
VCEsat
collector-emitter
saturation voltage
IC = 500 mA;
IB = 50 mA
0.5
V
VBE
Cc
base-emitter voltage
VCE = 2 V; IC = 500 mA
-
-
-
1
V
collector capacitance VCB = 10 V; IE = ie = 0 A;
15
-
pF
f = 1 MHz
fT
transition frequency
VCE = 5 V; IC = 50 mA;
-
145
-
MHz
f = 100 MHz
[1] Pulse test: tp 300 s; = 0.02.
BCP53_BCX53_BC53PA
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 9 — 19 October 2011
12 of 22
NXP [ NXP ]
