Philips Semiconductors
Product specification
PNP medium power transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
BCP51; BCP52; BCP53
CONDITIONS
note 1
VALUE
95
14
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
E
= 0; V
CB
=
−30
V; T
j
= 125
°C
I
C
= 0; V
EB
=
−5
V
V
CE
=
−2
V; see Fig.2
I
C
=
−5
mA
I
C
=
−150
mA
I
C
=
−500
mA
h
FE
DC current gain
BCP53-10
BCP51-16; BCP52-16; BCP53-16
V
CEsat
V
BE
f
T
collector-emitter saturation voltage
base-emitter voltage
transition frequency
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−500
mA; V
CE
=
−2
V
I
C
=
−10
mA; V
CE
=
−5
V;
f = 100 MHz
I
C
= 150 mA; V
CE
=
−2
V; see Fig.2
63
100
−
−
−
−
−
−
−
115
160
250
−0.5
−1
−
V
V
MHz
40
63
25
−
−
−
−
250
−
MIN.
−
−
−
TYP. MAX. UNIT
−
−
−
−100
−10
−100
nA
µA
nA
1999 Apr 08
3
PHILIPS [ NXP SEMICONDUCTORS ]
