Philips Semiconductors
Product specification
PNP medium power transistors
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 80 V)
•
Medium power (max. 1.3 W).
APPLICATIONS
•
Audio, telephony and automotive applications
•
Thick and thin-film circuits.
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complements: BCP54, BCP55 and BCP56.
1
Top view
handbook, halfpage
BCP51; BCP52; BCP53
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
4
2, 4
1
3
2
3
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BCP51
BCP52
BCP53
V
CEO
collector-emitter voltage
BCP51
BCP52
BCP53
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−
−65
−
−65
−45
−60
−80
−5
−1
−1.5
−0.2
1.3
+150
150
+150
V
V
V
V
A
A
A
W
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
−
−45
−60
−100
V
V
V
MIN.
MAX.
UNIT
1999 Apr 08
2
PHILIPS [ NXP SEMICONDUCTORS ]
