Philips Semiconductors
Product specification
PNP general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC856
BC857
BC856A; BC857A
BC856B; BC857B
BC857C
V
CEsat
V
BEsat
V
BE
C
c
f
T
F
Notes
1. V
BEsat
decreases by about
−1.7
m K/V with increasing temperature.
2. V
BE
decreases by about
−2
mV/K with increasing temperature.
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−100
mA; I
B
=
−5
mA
I
C
=
−10
mA; I
B
=
−0.5
mA; note 1
I
C
=
−100
mA; I
B
=
−5
mA; note 1
I
C
=
−2
mA; V
CE
=
−5
V; note 2
I
C
=
−10
mA; V
CE
=
−5
V; note 2
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
=
−10
mA; V
CE
=
−5
V;
f = 100 MHz
I
C
=
−200 µA;
V
CE
=
−5
V;
R
S
= 2 kΩ; f = 1 kHz; B = 200 Hz
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
E
= 0; V
CB
=
−30
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−2
mA; V
CE
=
−5
V;
see Figs 2, 3 and 4
−
−
−
125
125
125
220
420
−
−
−
−
−600
−
−
100
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
BC856; BC857
VALUE
500
UNIT
K/W
TYP.
−1
−
−
−
−
−
−
−
−75
−250
−700
−850
−650
−
4.5
−
2
MAX.
−15
−4
100
475
800
250
475
800
−300
−650
−
−
−750
−820
−
−
10
UNIT
nA
µA
nA
mV
mV
mV
mV
mV
mV
pF
MHz
dB
1999 Apr 12
3
PHILIPS [ NXP SEMICONDUCTORS ]
