Philips Semiconductors
Product specification
PNP general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 65 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC846 and BC847.
handbook, halfpage
BC856; BC857
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
MARKING
TYPE
NUMBER
BC856
BC856A
BC856B
BC857
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
MARKING
CODE
(1)
3D∗
3A∗
3B∗
3H∗
TYPE
NUMBER
BC857A
BC857B
BC857C
MARKING
CODE
(1)
3E∗
3F∗
3G∗
Top view
1
2
1
2
MAM256
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BC856
BC857
V
CEO
collector-emitter voltage
BC856
BC857
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Mounted on an FR4 printed-circuit board.
1999 Apr 12
2
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
−65
−45
−5
−100
−200
−200
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
−80
−50
V
V
MIN.
MAX.
UNIT
PHILIPS [ NXP SEMICONDUCTORS ]
