Philips Semiconductors
Product specification
NPN general purpose double transistor
THERMAL CHARACTERISTICS
SYMBOL
Per device
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per transistor
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA; note 1
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 2 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
−
−
−
200
−
−
−
580
−
100
−
−
−
−
−
−
755
655
−
11
−
PARAMETER
CONDITIONS
MIN.
thermal resistance from junction to ambient
note 1
416
PARAMETER
CONDITIONS
VALUE
BC847BS
UNIT
K/W
TYP.
MAX.
UNIT
15
5
100
450
100
300
−
700
1.5
−
−
nA
µA
nA
mV
mV
mV
mV
pF
pF
MHz
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
−
1999 Apr 28
3
PHILIPS [ NXP SEMICONDUCTORS ]
