Philips Semiconductors
Product specification
NPN general purpose double transistor
FEATURES
•
Low collector capacitance
•
Low collector-emitter saturation voltage
•
Closely matched current gain
•
Reduces number of components and board space
•
No mutual interference between the transistors.
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN double transistor in an SC-88 plastic package.
PNP complement: BC857BS.
MARKING
TYPE NUMBER
BC847BS
MARKING CODE
1Ft
TR1
1
Top view
2
3
1
MAM340
BC847BS
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
handbook, halfpage
6
5
4
5
4
6
TR2
2
3
Fig.1 Simplified outline (SC-88) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Device mounted on an FR4 printed-circuit board.
total power dissipation
T
amb
≤
25
°C;
note 1
−
300
mW
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
50
45
5
100
200
200
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1999 Apr 28
2
PHILIPS [ NXP SEMICONDUCTORS ]
