NXP Semiconductors
BAV99 series
High-speed switching diodes
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
BAV99
BAV99W
R
th(j-sp)
thermal resistance from
junction to solder point
BAV99
BAV99S
BAV99W
[1]
[2]
[3]
Single diode loaded.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Soldering points at pins 2, 3, 5 and 6.
Conditions
in free air
Min
Typ
Max
Unit
-
-
-
-
500
625
K/W
K/W
-
-
-
-
-
-
360
260
300
K/W
K/W
K/W
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
V
R
= 25 V
V
R
= 80 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 80 V; T
j
= 150
°C
C
d
t
rr
V
FR
[1]
[2]
Parameter
Conditions
Min
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
715
855
1
1.25
30
0.5
30
50
1.5
4
1.75
Unit
mV
mV
V
V
nA
μA
μA
μA
pF
ns
V
diode capacitance
reverse recovery time
forward recovery voltage
f = 1 MHz; V
R
= 0 V
-
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
When switched from I
F
= 10 mA; t
r
= 20 ns.
BAV99_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 8 — 18 November 2010
4 of 14
PHILIPS [ NXP SEMICONDUCTORS ]
