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BAV199/T3 参数 Datasheet PDF下载

BAV199/T3图片预览
型号: BAV199/T3
PDF下载: 下载PDF文件 查看货源
内容描述: [DIODE 0.16 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode]
分类和应用: 光电二极管
文件页数/大小: 8 页 / 121 K
品牌: PHILIPS [ NXP SEMICONDUCTORS ]
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NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV199
10
2
handbook, halfpage
IR
(nA)
MLB754
handbook, halfpage
2
MBG526
10
(1)
Cd
(pF)
1
1
10
1
10
2
(2)
10
3
0
0
50
100
150
T j ( C)
o
200
0
5
10
15
VR (V)
20
V
R
= 75 V.
(1) Maximum values.
(2) Typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of junction
temperature; per diode.
Fig.6
Diode capacitance as a function of reverse
voltage; per diode; typical values.
handbook, full pagewidth
tr
D.U.T.
10%
SAMPLING
OSCILLOSCOPE
R = 50
i
VR
90%
tp
t
RS = 50
V = VR I F x R S
IF
IF
t rr
t
(1)
MGA881
input signal
output signal
Fig.7 Reverse recovery time test circuit and waveforms.
2001 Oct 12
5