NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV199
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
−
−
−
−
900
mV
1000
1100
1250
mV
mV
mV
IF = 150 mA
IR
reverse current
see Fig.5
VR = 75 V
0.003
3
5
nA
nA
pF
µs
VR = 75 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
80
−
Cd
trr
diode capacitance
2
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
0.8
3
measured at IR = 1 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
VALUE
UNIT
K/W
K/W
360
500
Rth j-a
note 1
Note
1. Device mounted on a FR4 printed-circuit board.
2001 Oct 12
3
NXP [ NXP ]
