NXP Semiconductors
BAT54 series
Schottky barrier diodes
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
C
d
t
rr
[1]
[2]
Parameter
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
-
-
-
240
320
400
500
800
2
10
5
mV
mV
mV
mV
mV
A
pF
ns
reverse current
diode capacitance
reverse recovery time
Pulse test: t
p
300
s;
0.02.
V
R
= 25 V
f = 1 MHz; V
R
= 1 V
-
-
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA.
10
3
I
F
(mA)
10
2
(1)
006aac829
(3)
(2)
,
5
DDD
10
(1)
(2)
(3)
1
10
-1
0.0
0.4
0.8
V
F
(V)
1.2
9
5
(1) T
amb
= 125
C
(2) T
amb
= 85
C
(3) T
amb
= 25
C
(1) T
amb
= 125
C
(2) T
amb
= 85
C
(3) T
amb
= 25
C
Fig 1.
Forward current as a function of forward
voltage; typical values
Fig 2.
Reverse current as a function of reverse
voltage; typical values
BAT54_SER
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 5 October 2012
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