NXP Semiconductors
BAT54 series
Schottky barrier diodes
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
I
FRM
I
FSM
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak
forward current
total power dissipation
junction temperature
ambient temperature
storage temperature
T
j
= 25
C
before surge.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Parameter
Conditions
Min
-
Max
30
200
300
600
Unit
V
mA
mA
mA
T
amb
= 25
C
t
p
1 s;
0.5;
T
amb
= 25
C
square wave;
t
p
< 10 ms
T
amb
25
C
-
-
-
Per device; one diode loaded
P
tot
T
j
T
amb
T
stg
[1]
[2]
-
-
55
65
250
150
+150
+150
mW
C
C
C
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Min
-
Typ
-
Max
500
Unit
K/W
Per device; one diode loaded
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BAT54_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 5 October 2012
3 of 11
PHILIPS [ NXP SEMICONDUCTORS ]
