Philips Semiconductors
Product specification
High-speed diode
BAS316
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
see Fig.5
V
R
= 25 V
V
R
= 75 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 75 V; T
j
= 150
°C;
C
d
t
rr
V
fr
diode capacitance
reverse recovery time
forward recovery voltage
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to I
R
= 10 mA;
R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA; t
r
= 20 ns; see Fig.8
30
1
30
50
1.5
4
1.75
nA
µA
µA
µA
pF
ns
V
715
855
1
1.25
mV
mV
V
V
CONDITIONS
MAX.
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. Soldering point of the cathode tab.
PARAMETER
thermal resistance from junction to soldering point
note 1
CONDITIONS
VALUE
150
UNIT
K/W
1998 Mar 26
3
PHILIPS [ NXP SEMICONDUCTORS ]
