Philips Semiconductors
Product specification
High-speed diode
BAS316
FEATURES
•
Very small plastic SMD package
•
High switching speed: max. 4 ns
•
Continuous reverse voltage:
max. 75 V
•
Repetitive peak reverse voltage:
max. 85 V
•
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
•
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS316 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the SOD323 SMD plastic package.
handbook, halfpage
k
a
MAM157
Marking code:
A6.
Cathode side indicated by a bar.
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the cathode tab.
total power dissipation
storage temperature
junction temperature
T
s
= 90
°C;
note 1
−
−
−
−
−65
−
4
1
0.5
400
+150
150
A
A
A
mW
°C
°C
T
s
= 90
°C;
note 1; see Fig.2
CONDITIONS
−
−
−
−
MIN.
MAX.
85
75
250
500
V
V
mA
mA
UNIT
1998 Mar 26
2
PHILIPS [ NXP SEMICONDUCTORS ]
