Philips Semiconductors
Product specification
General purpose diodes
BAS19; BAS20; BAS21
10
2
handbook, halfpage
IR
(µA)
10
MBG381
handbook, halfpage
1.0
MBG447
Cd
(pF)
0.8
1
(1)
(2)
0.6
10
1
0.4
10
2
0
100
Tj (
o
C)
200
0.2
0
2
4
6
VR (V)
8
(1) V
R
= V
Rmax
; maximum values.
(2) V
R
= V
Rmax
; typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of
junction temperature.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
300
MBG445
VR
(V)
200
(1)
(2)
100
(3)
0
0
100
Tamb (
o
C)
200
(1) BAS21.
(2) BAS20.
(3) BAS19.
Fig.7
Maximum permissible continuous reverse
voltage as a function of the
ambient temperature.
1999 May 26
6
PHILIPS [ NXP SEMICONDUCTORS ]
