Philips Semiconductors
Product specification
General purpose diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BAS19
BAS20
BAS21
V
R
continuous reverse voltage
BAS19
BAS20
BAS21
I
F
I
FRM
I
FSM
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
see Fig.2; note 1
PARAMETER
repetitive peak reverse voltage
CONDITIONS
BAS19; BAS20; BAS21
MIN.
−
−
−
−
−
−
−
−
MAX.
120
200
250
100
150
200
200
625
V
V
V
V
V
V
UNIT
mA
mA
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 100
µs
t = 10 ms
−
−
−
−
−65
−
9
3
1.7
250
+150
150
A
A
A
mW
°C
°C
P
tot
T
stg
T
j
Note
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
1. Device mounted on an FR4 printed-circuit board.
1999 May 26
3
PHILIPS [ NXP SEMICONDUCTORS ]
