Philips Semiconductors
Product specification
High-speed diode
BAS16W
MGA884
MBG446
5
0.8
10
handbook, halfpage
C
I
d
R
(pF)
0.6
(nA)
V
= 75 V
R
4
3
10
max
75 V
25 V
10
0.4
0.2
2
10
typ
typ
0
0
10
0
100
4
8
12
16
200
o
T
(
C)
V
(V)
R
j
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1999 May 06
5