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BAS16W 参数 Datasheet PDF下载

BAS16W图片预览
型号: BAS16W
PDF下载: 下载PDF文件 查看货源
内容描述: 高速二极管 [High-speed diode]
分类和应用: 二极管
文件页数/大小: 12 页 / 61 K
品牌: NXP [ NXP ]
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Philips Semiconductors  
Product specification  
High-speed diode  
BAS16W  
FEATURES  
DESCRIPTION  
PINNING  
PIN  
Very small plastic SMD package  
High switching speed: max. 4 ns  
The BAS16W is a high-speed  
switching diode fabricated in planar  
technology, and encapsulated in the  
very small plastic SMD SOT323  
package.  
DESCRIPTION  
1
2
3
anode  
Continuous reverse voltage:  
max. 75 V  
not connected  
cathode  
Repetitive peak reverse voltage:  
max. 85 V  
Repetitive peak forward current:  
2
1
max. 500 mA.  
APPLICATIONS  
2
n.c.  
1
High-speed switching in e.g.  
surface mounted circuits.  
3
3
MAM095  
Top view  
Marking code: A6.  
Fig.1 Simplified outline (SOT323; SC-70) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
85  
UNIT  
VRRM  
VR  
repetitive peak reverse voltage  
continuous reverse voltage  
continuous forward current  
repetitive peak forward current  
V
V
75  
IF  
see Fig.2; note 1  
175  
500  
mA  
mA  
IFRM  
IFSM  
non-repetitive peak forward  
current  
square wave; Tj = 25 °C prior to  
surge; see Fig.4  
t = 1 µs  
4
A
t = 1 ms  
1
A
t = 1 s  
0.5  
200  
+150  
150  
A
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
Tamb = 25 °C; note 1  
mW  
°C  
°C  
65  
Note  
1. Device mounted on an FR4 printed-circuit board.  
1999 May 06  
2