74HC11; 74HCT11
NXP Semiconductors
Triple 3-input AND gate
Table 7.
Dynamic characteristics
GND = 0 V; CL = 50 pF; for load circuit see Figure 7.
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C Unit
Max Max
(85 °C) (125 °C)
Min
Typ
Max
74HCT11
[1]
tpd
propagation delay nA, nB to nY; see Figure 6
VCC = 4.5 V
-
-
-
-
16
11
7
24
-
30
-
36
-
ns
ns
ns
pF
VCC = 5.0 V; CL = 15 pF
[2]
[3]
tt
transition time
power dissipation per package;
capacitance VI = GND to VCC − 1.5 V
VCC = 4.5 V; see Figure 6
15
-
19
-
22
-
CPD
20
[1] tpd is the same as tPHL and tPLH
.
[2] tt is the same as tTHL and tTLH
.
[3] CPD is used to determine the dynamic power dissipation (PD in μW):
PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
∑ (CL × VCC2 × fo) = sum of outputs.
11. Waveforms
V
I
V
M
nA, nB, nC input
GND
t
t
PLH
PHL
V
OH
V
Y
V
M
nY output
V
X
V
OL
t
t
THL
TLH
001aal409
Measurement points are given in Table 9.
VOL and VOH are typical voltage output levels that occur with the output load.
Fig 6. Input to output propagation delays
Table 8.
Type
Measurement points
Input
VM
Output
VM
VX
VY
74HC11
0.5VCC
1.3 V
0.5VCC
1.3 V
0.1VCC
0.1VCC
0.9VCC
0.9VCC
74HCT11
74HC_HCT11_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 25 March 2010
6 of 15
NXP [ NXP ]
