Philips Semiconductors
Product specification
Quad 2-input NAND gate
Type 74HCT00
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
OTHER
T
amb
=
−40
to +85
°C;
note 1
V
IH
V
IL
V
OH
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 µA
I
O
=
−4.0
mA
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA
I
O
= 4.0 mA
I
LI
I
OZ
input leakage current
3-state output OFF current
V
I
= V
CC
or GND
4.5
4.5
5.5
−
−
−
−
4.5
4.5
4.4
4.5 to 5.5
4.5 to 5.5
2.0
−
V
CC
(V)
74HC00; 74HCT00
MIN.
TYP.
MAX.
UNIT
1.6
1.2
4.5
4.32
0
0.15
−
−
−
0.8
−
−
0.1
0.33
±1.0
±5.0
V
V
V
V
V
V
µA
µA
3.84
V
I
= V
IH
or V
IL
;
5.5
V
O
= V
CC
or GND;
I
O
= 0
V
I
= V
CC
or GND;
I
O
= 0
V
I
= V
CC
−
2.1 V;
I
O
= 0
5.5
4.5 to 5.5
I
CC
∆I
CC
quiescent supply current
additional supply current per input
−
−
−
150
20
675
µA
µA
T
amb
=
−40
to +125
°C
V
IH
V
IL
V
OH
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 µA
I
O
=
−4.0
mA
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA
I
O
= 4.0 mA
I
LI
I
OZ
input leakage current
3-state output OFF current
V
I
= V
CC
or GND
4.5
4.5
5.5
−
−
−
−
−
−
−
−
0.1
0.4
±1.0
±10
V
V
µA
µA
4.5
4.5
4.4
3.7
−
−
−
−
V
V
4.5 to 5.5
4.5 to 5.5
2.0
−
−
−
−
0.8
V
V
V
I
= V
IH
or V
IL
;
5.5
V
O
= V
CC
or GND;
I
O
= 0
V
I
= V
CC
or GND;
I
O
= 0
V
I
= V
CC
−
2.1 V;
I
O
= 0
5.5
4.5 to 5.5
I
CC
∆I
CC
Note
quiescent supply current
additional supply current per input
−
−
−
−
40
735
µA
µA
1. All typical values are measured at T
amb
= 25
°C.
2003 Jun 30
8
PHILIPS [ NXP SEMICONDUCTORS ]
