Philips Semiconductors
Product specification
Quad 2-input NAND gate
RECOMMENDED OPERATING CONDITIONS
74HC00
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
supply voltage
input voltage
output voltage
operating ambient
temperature
input rise and fall times
CONDITIONS
MIN.
2.0
0
0
see DC and AC
−40
characteristics per
device
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
−
−
−
TYP.
5.0
−
−
+25
MAX.
6.0
V
CC
V
CC
+125
74HC00; 74HCT00
74HCT00
UNIT
MIN.
4.5
0
0
−40
TYP.
5.0
−
−
+25
MAX.
5.5
V
CC
V
CC
+125
V
V
V
°C
t
r
, t
f
−
6.0
−
1000
500
400
−
−
−
−
6.0
−
−
500
−
ns
ns
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
I
IK
I
OK
I
O
I
CC
, I
GND
T
stg
P
tot
Note
1. For DIP14 packages: above 70
°C
derate linearly with 12 mW/K.
For SO14 packages: above 70
°C
derate linearly with 8 mW/K.
For SSOP14 and TSSOP14 packages: above 60
°C
derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60
°C
derate linearly with 4.5 mW/K.
PARAMETER
supply voltage
input diode current
output diode current
output source or sink
current
V
CC
or GND current
storage temperature
power dissipation
T
amb
=
−40
to +125
°C;
note 1
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V
−0.5
V < V
O
< V
CC
+ 0.5 V
CONDITIONS
−
−
−
−
−65
−
MIN.
−0.5
MAX.
+7.0
±20
±20
±25
±50
+150
500
V
mA
mA
mA
mA
°C
mW
UNIT
2003 Jun 30
5
PHILIPS [ NXP SEMICONDUCTORS ]
