Philips Semiconductors
Product specification
Quad 2-input NAND gate
74HC00; 74HCT00
TEST CONDITIONS
SYMBOL
PARAMETER
OTHER
T
amb
=
−40
to +125
°C
V
IH
HIGH-level input voltage
2.0
4.5
6.0
V
IL
LOW-level input voltage
2.0
4.5
6.0
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 µA
I
O
=
−20 µA
I
O
=
−20 µA
I
O
=
−4.0
mA
I
O
=
−5.2
mA
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA
I
O
= 20
µA
I
O
= 20
µA
I
O
= 4.0 mA
I
O
= 5.2 mA
I
LI
I
OZ
I
CC
Note
1. All typical values are measured at T
amb
= 25
°C.
input leakage current
V
I
= V
CC
or GND
3-state output OFF current V
I
= V
IH
or V
IL
;
V
O
= V
CC
or GND
quiescent supply current
2.0
4.5
6.0
4.5
6.0
6.0
6.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.1
0.1
0.1
0.4
0.4
±1.0
±10.0
40
V
V
V
V
V
µA
µA
µA
2.0
4.5
6.0
4.5
6.0
1.9
4.4
5.9
3.7
5.2
−
−
−
−
−
−
−
−
−
−
V
V
V
V
V
1.5
3.15
4.2
−
−
−
−
−
−
−
−
−
−
−
−
0.5
1.35
1.8
V
V
V
V
V
V
V
CC
(V)
MIN.
TYP.
MAX.
UNIT
V
I
= V
CC
or GND; I
O
= 0 6.0
2003 Jun 30
7
PHILIPS [ NXP SEMICONDUCTORS ]
