NXP Semiconductors
2N7002
60 V, 300 mA N-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
V
(BR)DSS
V
GSth
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 10 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 10 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 0.25 mA; V
DS
= V
GS
; T
j
= 25 °C;
I
D
= 0.25 mA; V
DS
= V
GS
; T
j
= 150 °C;
I
D
= 0.25 mA; V
DS
= V
GS
; T
j
= -55 °C;
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 48 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 48 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 15 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -15 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 500 mA; T
j
= 25 °C;
V
GS
= 10 V; I
D
= 500 mA; T
j
= 150 °C;
V
GS
= 4.5 V; I
D
= 75 mA; T
j
= 25 °C; see
Dynamic characteristics
C
iss
C
oss
C
rss
t
on
t
off
V
SD
Q
r
t
rr
input capacitance
output capacitance
reverse transfer
capacitance
turn-on time
turn-off time
source-drain voltage
recovered charge
reverse recovery time
V
GS
= 10 V; V
DS
= 50 V; R
L
= 250
Ω;
R
G(ext)
= 50
Ω;
R
GS
= 50
Ω
V
DS
= 10 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
-
-
-
-
-
-
-
-
31
6.8
3.5
2.5
11
0.85
30
30
50
30
10
10
15
1.5
-
-
pF
pF
pF
ns
ns
V
nC
ns
Min
60
55
1
0.6
-
-
-
-
-
-
-
-
Typ
-
-
2
-
-
0.01
-
10
10
2.8
-
3.8
Max
-
-
2.5
-
2.75
1
10
100
100
5
9.25
5.3
Unit
V
V
V
V
V
µA
µA
nA
nA
Ω
Ω
Ω
Static characteristics
Source-drain diode
I
S
= 300 mA; V
GS
= 0 V; T
j
= 25 °C; see
V
GS
= 0 V; I
S
= 300 mA;
dI
S
/dt = -100 A/µs
2N7002
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 8 September 2011
5 of 13
PHILIPS [ NXP SEMICONDUCTORS ]
