SO
T2
2N7002
60 V, 300 mA N-channel Trench MOSFET
Rev. 7 — 8 September 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
Trench MOSFET technology.
3
1.2 Features and benefits
Suitable for logic level gate drive
sources
Very fast switching
Surface-mounted package
Trench MOSFET technology
1.3 Applications
Logic level translators
High-speed line drivers
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
25 °C
≤
T
j
≤
150 °C
V
GS
= 10 V; T
sp
= 25 °C; see
T
sp
= 25 °C; see
V
GS
= 10 V; I
D
= 500 mA; T
j
= 25 °C;
Min
-
-
-
-
Typ
-
-
-
2.8
Max
60
300
0.83
5
Unit
V
mA
W
Ω
Static characteristics
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
S
D
gate
source
drain
1
2
mbb076
Simplified outline
3
Graphic symbol
D
G
SOT23 (TO-236AB)
S
PHILIPS [ NXP SEMICONDUCTORS ]
