Philips Semiconductors
Product specification
PNP high-voltage transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−120
V
I
E
= 0; V
CB
=
−120
V; T
amb
= 100
°C
I
C
= 0; V
EB
=
−4
V
I
C
=
−1
mA; V
CE
=
−5
V; see Fig.2
I
C
=
−10
mA; V
CE
=
−5
V; see Fig.2
I
C
=
−50
mA; V
CE
=
−5
V; see Fig.2
V
CEsat
C
c
f
T
F
collector-emitter saturation voltage I
C
=
−10
mA; I
B
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA
collector capacitance
transition frequency
noise figure
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
=
−200 µA;
V
CE
=
−5
V; R
S
= 2 kΩ;
f = 10 Hz to 15.7 kHz
−
−
−
50
60
50
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
200
2N5401
UNIT
K/W
MAX.
−50
−50
−50
−
240
−
−200
−500
6
300
8
UNIT
nA
µA
nA
mV
mV
pF
MHz
pF
I
C
=
−10
mA; V
CE
=
−10
V; f = 100 MHz 100
1999 Apr 08
3
PHILIPS [ NXP SEMICONDUCTORS ]
