Philips Semiconductors
Product specification
PNP high-voltage transistor
FEATURES
•
Low current (max. 300 mA)
•
High voltage (max. 150 V).
APPLICATIONS
•
General purpose switching and amplification
•
Telephony applications.
1
handbook, halfpage
2N5401
PINNING
PIN
1
2
3
collector
base
emitter
DESCRIPTION
DESCRIPTION
PNP high-voltage transistor in a TO-92; SOT54 plastic
package. NPN complement: 2N5551.
Fig.1
2
3
1
2
3
MAM280
Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−160
−150
−5
−300
−600
−100
630
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1999 Apr 08
2
PHILIPS [ NXP SEMICONDUCTORS ]
