Philips Semiconductors
Product specification
PNP switching transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
2N2907
I
CBO
collector cut-off current
2N2907A
I
EBO
h
FE
emitter cut-off current
DC current gain
2N2907
I
E
= 0; V
CB
=
−50
V
I
E
= 0; V
CB
=
−50
V; T
amb
= 150
°C
I
C
= 0; V
EB
=
−5
V
V
CE
=
−10
V
I
C
=
−0.1
mA
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−150
mA; note 1
I
C
=
−500
mA; note 1
h
FE
DC current gain
2N2907A
V
CE
=
−10
V
I
C
=
−0.1
mA
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−150
mA; note 1
I
C
=
−500
mA; note 1
V
CEsat
V
BEsat
C
c
C
e
f
T
collector-emitter saturation voltage I
C
=
−150
mA; I
B
=
−15
mA; note 1
I
C
=
−500
mA; I
B
=
−50
mA; note 1
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
=
−150
mA; I
B
=
−15
mA; note 1
I
C
=
−500
mA; I
B
=
−50
mA; note 1
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
−2
V; f = 1 MHz
PARAMETER
collector cut-off current
I
E
= 0; V
CB
=
−50
V
I
E
= 0; V
CB
=
−50
V; T
amb
= 150
°C
CONDITIONS
2N2907; 2N2907A
MIN.
−
−
−
−
−
35
50
75
100
30
75
100
100
100
50
MAX.
−20
−20
−10
−10
−50
−
−
−
300
UNIT
nA
µA
nA
µA
nA
−
−
−
300
−
−400
−1.6
−1.3
−2.6
mV
V
V
V
pF
pF
MHz
−
−
200
8
30
−
I
C
=
−50
mA; V
CE
=
−20
V; f = 100 MHz;
note 1
Switching times (between 10% and 90% levels);
see Fig.2
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
=
−150
mA; I
Bon
=
−15
mA; I
Boff
= 15 mA
−
−
−
−
−
−
45
15
35
300
250
50
ns
ns
ns
ns
ns
ns
1997 May 30
4
PHILIPS [ NXP SEMICONDUCTORS ]
