Philips Semiconductors
Product specification
PNP switching transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
PARAMETER
collector-base voltage
collector-emitter voltage
2N2907
2N2907A
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
T
case
≤
25
°C
open collector
CONDITIONS
open emitter
open base; I
C
< −100
mA
2N2907; 2N2907A
MIN.
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
−60
−40
−60
−5
−600
−800
−200
400
1.2
+150
200
+150
V
V
V
V
UNIT
mA
mA
mA
mW
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-c
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
VALUE
438
146
UNIT
K/W
K/W
1997 May 30
3
PHILIPS [ NXP SEMICONDUCTORS ]
