Philips Semiconductors
Product specification
NPN switching transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
2N2219
I
CBO
collector cut-off current
2N2219A
I
EBO
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
emitter cut-off current
DC current gain
DC current gain
DC current gain
DC current gain
2N2219A
DC current gain
DC current gain
DC current gain
2N2219
2N2219A
V
CEsat
collector-emitter saturation voltage
2N2219
2N2219A
V
CEsat
collector-emitter saturation voltage
2N2219
2N2219A
V
BEsat
base-emitter saturation voltage
2N2219
2N2219A
V
BEsat
base-emitter saturation voltage
2N2219
2N2219A
C
c
C
e
f
T
collector capacitance
emitter capacitance
2N2219A
transition frequency
2N2219
2N2219A
F
noise figure
2N2219A
I
C
= 0.2 mA; V
CE
= 5 V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
I
C
= 20 mA; V
CE
= 20 V; f = 100 MHz;
I
E
= i
e
= 0; V
CB
= 10 V
I
C
= i
c
= 0; V
EB
= 500 mV
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 150 mA; I
B
= 15 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 150 mA; I
B
= 15 mA; note 1
I
C
= 150 mA; V
CE
= 1 V; note 1
I
C
= 150 mA; V
CE
= 10 V; note 1
I
C
= 500 mA; V
CE
= 10 V; note 1
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
amb
= 150
°C
I
C
= 0; V
EB
= 3 V
I
C
= 0.1 mA; V
CE
= 10 V
I
C
= 1 mA; V
CE
= 10 V
I
C
= 10 mA; V
CE
= 10 V
PARAMETER
collector cut-off current
I
E
= 0; V
CB
= 50 V
I
E
= 0; V
CB
= 50 V; T
amb
= 150
°C
CONDITIONS
2N2219; 2N2219A
MIN.
−
−
−
−
−
35
50
75
35
50
100
30
40
−
−
−
−
−
0.6
−
−
−
−
250
300
−
MAX.
10
10
10
10
10
−
−
−
−
−
300
−
−
400
300
1.6
1
1.3
1.2
2.6
2
8
25
−
−
4
UNIT
nA
µA
nA
µA
nA
I
C
= 10 mA; V
CE
= 10 V; T
amb
=
−55 °C
mV
mV
V
V
V
V
V
V
pF
pF
MHz
MHz
dB
1997 Sep 03
4
PHILIPS [ NXP SEMICONDUCTORS ]
