Philips Semiconductors
Product specification
NPN switching transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
2N2219
2N2219A
V
CEO
collector-emitter voltage
2N2219
2N2219A
V
EBO
emitter-base voltage
2N2219
2N2219A
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
T
case
≤
25
°C
open base
open base; I
C
≤
500 mA
open collector
−
−
−
−
−
−
−
−
−
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
2N2219; 2N2219A
MIN.
MAX.
60
75
30
40
5
6
800
800
200
800
3
+150
200
+150
V
V
V
V
V
V
UNIT
mA
mA
mA
mW
W
°C
°C
°C
−65
−
−65
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-c
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
VALUE
190
50
UNIT
K/W
K/W
1997 Sep 03
3
PHILIPS [ NXP SEMICONDUCTORS ]
