Philips Semiconductors
Preliminary specification
High-speed double diodes
CONDITIONS
−
−65
−
MIN.
MAX.
250
+150
+150
UNIT
mW
°C
°C
SYMBOL
P
tot
T
stg
T
j
Note
PARAMETER
storage temperature
junction temperature
total power dissipation (per package) T
amb
≤
25
°C;
note 1
1. Refer to SC-89 (SOT490) standard mounting conditions.
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.6
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
R
reverse current
see Fig.8
V
R
= 25 V
V
R
= 80 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 80 V; T
j
= 150
°C
C
d
diode capacitance
t
rr
reverse recovery time
switched from I
F
= 10 mA to I
R
= 10 mA;
R
L
= 100
Ω;
measured at I
R
= 1 mA;
see Fig.10
switched to I
F
= 10 mA; t
r
= 20 ns;
see Fig.11
f = 1 MHz; V
R
= 0; see Fig.9
−
−
−
−
1.5
1.5
2
4
pF
pF
pF
ns
−
−
−
−
30
0.5
30
100
nA
µA
µA
µA
610
740
−
−
−
−
1
1.2
mV
mV
V
V
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
fr
forward recovery voltage
−
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
R
th j-a
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
thermal resistance from junction to ambient
note 1
PARAMETER
CONDITIONS
VALUE
55
70
70
500
UNIT
K/W
K/W
K/W
K/W
thermal resistance from junction to soldering point both diodes loaded
1999 Jun 08
3
PHILIPS [ NXP SEMICONDUCTORS ]
