Philips Semiconductors
Preliminary specification
High-speed double diodes
FEATURES
•
Power dissipation comparable to
SOT23
•
Ultra small plastic SMD package
•
High switching speed: max. 4 ns
•
Continuous reverse voltage:
max. 80 V
•
Repetitive peak reverse voltage:
max. 85 V
•
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
•
High speed switching in e.g.
surface mounted circuits.
DESCRIPTION
Two high-speed switching diodes in
planar technology, with different
configurations, in an ultra small
SC-89 (SOT490) plastic SMD
package.
fpage
PINNING
1PS89SS..
PIN
04
1
2
3
a
1
k
2
k
1
, a
2
05
a
1
a
2
k
1
, k
2
06
k
1
k
2
a
1
, a
2
Fig.2
1
2
MGL550
3
configuration (symbol).
3
3
1
1
Top view
2
MBK837
MGL551
2
Fig.1
Simplified outline
(SC-89; SOT490) and
pin configuration.
Fig.3
configuration (symbol).
MARKING
TYPE NUMBER
MARKING
CODE
S4
S5
S6
Fig.4
1
3
2
MGL552
configuration (symbol).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
−
−
T
amb
= 25
°C;
note 1; see Fig.5
single diode loaded
both diodes loaded
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.7
t = 1
µs
t=1s
−
−
4
0.5
A
A
−
−
−
200
125
500
mA
mA
mA
MIN.
MAX.
UNIT
Per diode
unless otherwise specified
V
RRM
V
R
I
F
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
85
80
V
V
1999 Jun 08
2
PHILIPS [ NXP SEMICONDUCTORS ]
