Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
see Fig.2
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 200 mA
I
R
C
d
Note
1. Pulse test: pulse width = 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SC-79 (SOD523) standard mounting conditions.
PARAMETER
CONDITIONS
VALUE
450
continuous reverse current
diode capacitance
V
R
= 25 V; note 1; see Fig.3
V
R
= 1 V; f = 1 MHz; see Fig.4
190
250
320
440
520
−
−
TYP.
1PS79SB30
MAX.
220
290
360
500
600
0.5
20
UNIT
mV
mV
mV
mV
mV
µA
pF
UNIT
K/W
thermal resistance from junction to ambient note 1
2001 Feb 20
3
PHILIPS [ NXP SEMICONDUCTORS ]
