Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES
•
Very low forward voltage
•
Very low reverse current
•
Guard ring protected
•
Ultra small SMD package.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Blocking diodes
•
Low power consumption applications (e.g. hand-held
applications).
Marking code:
G1.
Top view
MGU325
1PS79SB30
PINNING
PIN
1
2
DESCRIPTION
cathode
anode
handbook, halfpage
1
2
DESCRIPTION
Fig.1
Planar Schottky barrier diode encapsulated in a SC-79
(SOD523) ultra small SMD plastic package.
Simplified outline (SC-79; SOD523)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
PARAMETER
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
t
p
≤
1 s;
δ ≤
0.5
t = 8.3 ms half sinewave;
JEDEC method
CONDITIONS
−
−
−
−
−65
−
−65
MIN.
MAX.
40
200
300
1
+150
150
+150
V
mA
mA
A
°C
°C
°C
UNIT
2001 Feb 20
2
PHILIPS [ NXP SEMICONDUCTORS ]
