Philips Semiconductors
Product specification
Schottky barrier diode
GRAPHICAL DATA
1PS76SB40
10
2
handbook, halfpage
IF
(mA)
10
MLC361 - 1
handbook, halfpage
10
3
MLC362
IR
(µA)
(1)
10
2
10
(1)
(2)
(3)
(4)
(2)
1
1
10
1
10
−1
(3)
10
2
10
−2
0
0.2
0.4
0.6
0.8
V F (V)
1.0
0
10
20
30
VR (V)
40
(1) T
amb
= 150
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
(4) T
amb
=
−40 °C.
(1) T
amb
= 150
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
10
3
handbook, halfpage
r diff
(Ω)
10
2
MLC364
MLC363
handbook, halfpage
5
Cd
(pF)
4
3
2
10
1
1
10
1
0
1
10
IF (mA)
10
2
0
10
20
30
VR (V)
40
f = 10 kHz.
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Differential forward resistance as a function
of forward current; typical values.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
1999 Apr 26
4
PHILIPS [ NXP SEMICONDUCTORS ]
