Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
continuous forward voltage
CONDITIONS
see Fig.2
I
F
= 1 mA
I
F
= 10 mA
I
F
= 40 mA
I
R
C
d
Note
1. Pulse test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOD323 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
continuous reverse current
diode capacitance
V
R
= 30 V; note 1; see Fig.3
V
R
= 40 V; note 1; see Fig.3
V
R
= 0 ; f = 1 MHz; see Fig.5
380
500
1
1
10
5
1PS76SB40
MAX.
UNIT
mV
mV
V
µA
µA
pF
VALUE
450
UNIT
K/W
1999 Apr 26
3