BAS70 series; 1PS7xSB70 series
NXP Semiconductors
General-purpose Schottky diodes
4. Marking
Table 5.
Marking codes
Type number
1PS76SB70
1PS79SB70
BAS70
Marking code[1]
Type number
BAS70-05W
BAS70-06
BAS70-06W
BAS70-07
BAS70-07S
BAS70-07V
BAS70VV
BAS70XY
-
Marking code[1]
S2
G
75*
76*
76*
77*
77*
77
73*
AH
S8
BAS70H
BAS70L
BAS70W
73*
74*
74*
75*
BAS70-04
BAS70-04W
BAS70-05
N1
70*
-
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
VR
Parameter
Conditions
Min
Max
Unit
reverse voltage
forward current
-
-
-
70
70
70
V
IF
mA
mA
IFRM
repetitive peak forward
current
tp ≤ 1 s; δ ≤ 0.5
[1]
IFSM
non-repetitive peak forward tp ≤ 10 ms
-
100
mA
current
Tj
junction temperature
ambient temperature
storage temperature
-
150
°C
°C
°C
Tamb
Tstg
−65
−65
+150
+150
[1] Tj = 25 °C prior to surge.
BAS70_1PS7XSB70_SER_9
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 09 — 13 January 2010
5 of 20
NXP [ NXP ]
