Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES
•
Ultra fast switching speed
•
Low forward voltage
•
Fast recovery time
•
Guard ring protected
•
Small plastic SMD package
•
Capability of absorbing very high
surge current.
APPLICATIONS
•
Rectification
•
Circuit protection
•
Polarity protection
•
Switched-mode power supplies.
1
2
3
MAM421
1PS74SB43
PINNING
PIN
1
2
3
4
5
6
anode
cathode
anode
anode
cathode
anode
DESCRIPTION
handbook, halfpage
6
5
4
2, 5
1, 3,
4, 6
DESCRIPTION
Planar Schottky barrier diode
encapsulated in an SC-74 (SOT457)
small plastic SMD package.
Marking code:
P2.
Top view
Fig.1 Simplified outline SC-74 (SOT457) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
I
FSM
I
RSM
T
stg
T
j
Note
1. Pins 1, 3, 4 and 6 are connected in parallel; pins 2 and 5 are connected in parallel.
PARAMETER
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
non-repetitive peak reverse current
storage temperature
junction temperature
tp
=
8.3 ms; half sinewave;
JEDEC method; note 1
tp = 100
µs
CONDITIONS
−
−
−
−
−65
−
MIN.
MAX.
40
1
27
0.5
+150
125
UNIT
V
A
A
A
°C
°C
1999 Dec 10
2
PHILIPS [ NXP SEMICONDUCTORS ]
