Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
CONDITIONS
I
F
= 500 mA; see Fig.2
V
R
= 35 V; see Fig.3
V
R
= 35 V; T
j
= 100
°C;
see Fig.3;
note 1
C
d
Note
1. Pulse test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.4
−
−
−
60
MIN.
1PS70SB20
MAX.
550
100
10
90
UNIT
mV
µA
mA
pF
VALUE
500
UNIT
K/W
2001 Mar 16
3
PHILIPS [ NXP SEMICONDUCTORS ]
