Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES
•
Ultra high switching speed
•
Low forward voltage
•
Guard ring protected
•
Small SMD plastic package.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits.
1
2
1
handbook, halfpage
1PS70SB20
DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring for stress protection
in a SOT323 (SC-70) small SMD plastic package.
3
3
2
n.c.
PINNING
PIN
1
2
3
DESCRIPTION
anode
not connected
cathode
Marking code:
72.
Top view
MAM394
Fig.1 Simplified outline (SOT323; SC-70) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
FSM
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
storage temperature
junction temperature
−
−
t = 8.3 ms half sine wave;
JEDEC method
−
−
CONDITIONS
−
−
−
−65
−
MIN.
MAX.
40
500
2
+150
125
V
mA
A
°C
°C
UNIT
2001 Mar 16
2
PHILIPS [ NXP SEMICONDUCTORS ]
