Philips Semiconductors
Product specification
Schottky barrier (double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
PARAMETER
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
MIN.
−
−
−65
−
MAX.
UNIT
15
30
+150
125
V
mA
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to (SOT323; SC-70) standard mounting conditions.
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.6
I
F
= 1 mA
I
F
= 30 mA
r
D
I
R
C
d
Note
1. Pulsed test: t
p
= 300
µs; δ
= 0.02.
differential diode forward resistance
continuous reverse current
diode capacitance
f = 1 MHz; I
F
= 5 mA; see Fig.9
V
R
= 1 V; note 1; see Fig.7
V
R
= 0; f = 1 MHz; see Fig.8
−
−
12
−
1
340
700
−
0.2
−
mV
mV
Ω
µA
pF
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
625
UNIT
K/W
2001 Jan 18
3
PHILIPS [ NXP SEMICONDUCTORS ]
