Philips Semiconductors
1PS66SB63; 1PS79SB63
5 V, 20 mA low C
d
Schottky barrier diodes
5. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
R
I
F
T
j
T
amb
T
stg
continuous reverse voltage
continuous forward current
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
-
-
−65
−65
Max
5
20
125
+125
+150
Unit
V
mA
°C
°C
°C
6. Thermal characteristics
Table 7:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from in free air
junction to ambient
SOT666
SOD523
-
-
-
-
700
450
K/W
K/W
[1]
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
Refer to SOT666 standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOD523 (SC-79) standard mounting conditions.
[2]
[3]
[4]
7. Characteristics
Table 8:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
see
I
F
= 0.1 mA
I
F
= 1 mA
I
R
reverse current
see
V
R
= 1 V
V
R
= 5 V
C
d
L
s
[1]
Min
-
-
-
-
-
-
Typ
160
240
0.4
-
0.35
0.6
Max
200
300
1
50
0.5
-
Unit
mV
mV
µA
µA
pF
nH
diode
capacitance
series inductance
V
R
= 0 V; f = 1 MHz;
see
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
9397 750 13846
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 3 December 2004
3 of 10
PHILIPS [ NXP SEMICONDUCTORS ]
