Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.2
I
F
= 10 mA
I
F
= 100 mA
I
F
= 200 mA
I
R
C
d
Note
1. Pulse test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SC-59 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
reverse current
diode capacitance
V
R
= 30 V; note 1; see Fig.3
f = 1 MHz; V
R
= 0; see Fig.4
−
−
−
−
40
CONDITIONS
MIN.
1PS59SB21
MAX.
300
420
550
15
3
50
UNIT
mV
mV
mV
µA
mA
pF
V
R
= 30 V; T
j
= 100
°C;
note 1; see Fig.3
−
VALUE
500
UNIT
K/W
1999 May 05
3
PHILIPS [ NXP SEMICONDUCTORS ]
