Philips Semiconductors
Product specification
High-speed diode
GRAPHICAL DATA
1N914
100
MGD289
handbook, halfpage
600
MBG464
IF
(mA)
IF
(mA)
400
(1)
(2)
(3)
50
200
0
0
100
T amb ( C)
o
200
0
0
(1) T
j
= 175
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
1
VF (V)
2
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG704
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 26
4
PHILIPS [ NXP SEMICONDUCTORS ]
