Philips Semiconductors
Product specification
High-speed diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
see Fig.5
V
R
= 20 V
V
R
= 75 V
V
R
= 20 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured at
I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100
Ω;
measured at
I
R
= 1 mA; see Fig.7
V
fr
forward recovery voltage
when switched from I
F
= 50 mA; t
r
= 20 ns;
see Fig.8
25
5
50
4
8
CONDITIONS
I
F
= 10 mA; see Fig.3
1
MAX.
1N914
UNIT
V
nA
µA
µA
pF
ns
4
ns
2.5
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board without metallization pad.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 10 mm
lead length 10 mm; note 1
VALUE
240
500
UNIT
K/W
K/W
1999 May 26
3
PHILIPS [ NXP SEMICONDUCTORS ]
