欢迎访问ic37.com |
会员登录 免费注册
发布采购

1N821T/R 参数 Datasheet PDF下载

1N821T/R图片预览
型号: 1N821T/R
PDF下载: 下载PDF文件 查看货源
内容描述: [DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Reference Diode]
分类和应用: 二极管测试
文件页数/大小: 5 页 / 33 K
品牌: PHILIPS [ NXP SEMICONDUCTORS ]
 浏览型号1N821T/R的Datasheet PDF文件第1页浏览型号1N821T/R的Datasheet PDF文件第3页浏览型号1N821T/R的Datasheet PDF文件第4页浏览型号1N821T/R的Datasheet PDF文件第5页  
Philips Semiconductors
Product specification
Voltage reference diodes
FEATURES
Temperature compensated
Reference voltage range:
5.89 to 6.51 V (typ. 6.20 V)
Low temperature coefficient range:
max. 0.0005 to 0.01 %/K.
k
handbook, halfpage
1N821 to 1N829
1N821A to 1N829A
DESCRIPTION
Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass
package.
a
MAM216
APPLICATION
Voltage reference sources in
measuring instruments such as
digital voltmeters.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
Z
P
tot
T
stg
T
j
T
amb
PARAMETER
working current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
= 50
°C
CONDITIONS
MIN.
−65
−55
MAX.
50
400
+200
200
+100
UNIT
mA
mW
°C
°C
°C
1996 Mar 20
2