Philips Semiconductors
Product specification
Controlled avalanche rectifiers
MGC735
MGC734
handbook, halfpage
15
10
3
handbook, halfpage
IR
(µA)
10
2
IF
(A)
10
max
10
5
1
0
0
1
V (V)
F
2
10
−1
0
40
80
120
160
Tj ( C)
o
200
Solid line: T
j
= 25
°C.
Dotted line: T
j
= 175
°C.
V
R
= V
RRMmax
.
Fig.6
Forward current as a function of forward
voltage; maximum values.
Fig.7
Reverse current as a function of junction
temperature; maximum values.
10
2
handbook, halfpage
MBG031
handbook, halfpage
50
25
Cd
(pF)
7
10
50
2
3
1
10
VR (V)
10
2
MGA200
1
f = 1 MHz; T
j
= 25
°C.
Dimensions in mm.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
Fig.9 Device mounted on a printed-circuit board.
1996 Jun 19
5
PHILIPS [ NXP SEMICONDUCTORS ]
