Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
2/3 page
k
(Datasheet)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
RWM
crest working reverse voltage
V
R
continuous reverse voltage
I
F(AV)
average forward current
PARAMETER
repetitive peak reverse voltage
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
200
400
600
800
200
400
600
800
200
400
600
800
2.0
V
V
V
V
V
V
V
V
V
V
V
V
A
UNIT
T
tp
= 45
°C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
T
amb
= 80
°C;
PCB mounting
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
−
−
0.8
A
I
FSM
E
RSM
T
stg
T
j
non-repetitive peak forward current
non-repetitive peak reverse avalanche
energy
storage temperature
junction temperature
t = 10 ms half sinewave
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
see Fig.5
−
−
−65
−65
50
20
+175
+175
A
mJ
°C
°C
1996 Jun 19
2
PHILIPS [ NXP SEMICONDUCTORS ]
